View BTS555E3146_63032.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PROFET(R) Data Sheet BTS555
Smart Highside High Current Power Switch
Reversave
* Reverse battery protection by self turn on of power MOSFET
Reversave
Vbb(AZ) 62 VON(CL) 44 Vbb(on) 5.0 ... 34 RON1) IL(ISO) IL(SCp) IL : IIS V V V
* Overload protection * Current limitation * Short circuit protection * Overtemperature protection * Overvoltage protection (including load dump) * Clamp of negative voltage at output * Fast deenergizing of inductive loads 2) * Low ohmic inverse current operation * Diagnostic feedback with load current sense * Open load detection via current sense * Loss of Vbb protection3) * Electrostatic discharge (ESD) protection
Features
Product Summary Overvoltage protection Output clamp Operating voltage On-state resistance Load current (ISO) Short circuit current limitation Current sense ratio TO-218AB/5
2.5 m 165 A 520 A 30 000
TO-218AB-5-1
5 1 Straight leads
* Power switch with current sense diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for loads with high inrush current like lamps and motors; all types of resistive and inductive loads * Replaces electromechanical relays, fuses and discrete circuits
Application
Staggered leads
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
R
Voltage source
Overvoltage protection
Current limit
Gate protection
bb
+ V bb
Voltage sensor
Charge pump Level shifter Rectifier
Limit for unclamped ind. loads Output Voltage detection
OUT
1, 5
IL
Current Sense Load
2
IN
ESD
Logic
I IN
Temperature sensor I IS
IS
PROFET
Load GND
VIN V IS
Logic GND
4
R IS
1 2 3)
)
)
Due to the different lead frame geometry Ron @25C is 0.3 m higher in staggered than in straight version, and accordingly for other temperatures. With additional external diode. Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 16
2003-Oct-01
Data Sheet BTS555
Pin 1 2 3
Symbol OUT IN Vbb O I
Function Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!4) Input, activates the power switch in case of short to ground Positive power supply voltage, the tab is electrically connected to this pin. In high current applications the tab should be used for the Vbb connection instead of this pin5). Diagnostic feedback providing a sense current proportional to the load current; zero current on failure (see Truth Table on page 7) Output to the load. The pins 1 and 5 must be shorted with each other especially in high current applications!4)
+
4 5
IS OUT
S O
Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection, (EAS limitation see diagram on page 9) Tj,start =-40 .+150C: Load current (short circuit current, see page 5) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI6) = 2 , RL = 0.1 , td = 200 ms, IN, IS = open or grounded Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150C, TC = 150C const., IL = 20 A, ZL = 15 mH, 0 , see diagrams on page 10 Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Symbol Vbb Vbb IL VLoad dump7) Tj Tstg Ptot EAS VESD IIN IIS
Values 40 34 self-limited 80 -40 ...+150 -55 ...+150 360 3 4.0 +15 , -250 +15 , -250
Unit V V A V C W J kV mA
Current through input pin (DC) Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
4) 5) 6) 7)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability and decrease the current sense accuracy Otherwise add up to 0.5 m (depending on used length of the pin) to the RON if the pin is used instead of the tab. RI = internal resistance of the load dump test pulse generator. VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
2
2003-Oct-01
Data Sheet BTS555 Thermal Characteristics
Parameter and Conditions Thermal resistance Symbol min --chip - case: RthJC8) junction - ambient (free air): RthJA Values typ max -- 0.35 30 -Unit K/W
Electrical Characteristics
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Load Switching Capabilities and Characteristics On-state resistance (Tab to pins 1,5, see measurement circuit page 7) IL = 30 A, Tj = 25 C: RON1) VIN = 0, IL = 30 A, Tj = 150 C: IL = 120 A, Tj = 150 C: Vbb = 6 IL = 20 A, Tj = 150 C: RON(Static) 1) Nominal load current10) (Tab to pins 1,5) IL(ISO) 11) ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 C Maximum load current in resistive range (Tab to pins 1,5) VON = 1.8 V, Tc = 25 C: IL(Max) see diagram on page 13 VON = 1.8 V, Tc = 150 C: 12) Turn-on time IIN to 90% VOUT: ton Turn-off time IIN to 10% VOUT: toff RL = 1 , Tj =-40...+150C Slew rate on 12) (10 to 30% VOUT ) dV/dton RL = 1 -dV/dtoff Slew rate off 12) (70 to 40% VOUT ) RL = 1 V9),
----128
1.9 3.3 -4.6 165
2.5 4.0 4.0 9.0 --
m
A
520 360 120 50 0.3 0.3
----0.5 0.7
--600 200 0.8 1
A s
V/s V/s
8)
Thermal resistance RthCH case to heatsink (about 0.25 K/W with silicone paste) not included! Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 C. 10) not subject to production test, specified by design 11) T is about 105C under these conditions. J 12) See timing diagram on page 14.
9)
Infineon Technologies AG
3
2003-Oct-01
Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Inverse Load Current Operation On-state resistance (Pins 1,5 to pin 3) VbIN = 12 V, IL = - 30 A
Tj = 25 C: RON(inv) 1) see diagram on page 10 Tj = 150 C: Nominal inverse load current (Pins 1,5 to Tab) IL(inv) 11 VON = -0.5 V, Tc = 85 C Drain-source diode voltage (Vout > Vbb) -VON IL = - 20 A, IIN = 0, Tj = +150C Operating Parameters Operating voltage (VIN = 0) 13) Undervoltage shutdown 14) Undervoltage start of charge pump see diagram page 15 Overvoltage protection15) Tj =-40C: Ibb = 15 mA Tj = 25...+150C: Standby current Tj =-40...+25C: IIN = 0 Tj = 150C: Vbb(on) VbIN(u) VbIN(ucp) VbIN(Z) Ibb(off)
-128 --
1.9 3.3 165 0.6
2.5 4.0 -0.7
m A V
5.0 1.5 3.0 60 62 ---
-3.0 4.5 -66 15 25
34 4.5 6.0 --25 50
V V V V A
13)
If the device is turned on before a Vbb-decrease, the operating voltage range is extended down to VbIN(u). For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit. 14) V bIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V (typ.) the charge pump is not active and VOUT Vbb - 3 V. 15) See also VON(CL) in circuit diagram on page 8.
Infineon Technologies AG
4
2003-Oct-01
Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max
Unit
Protection Functions16) Short circuit current limit (Tab to pins 1,5)17) VON = 12 V, time until shutdown max. 300 s Tc =-40C: IL(SCp) Tc =25C: Tc =+150C: Short circuit shutdown delay after input current positive slope, VON > VON(SC) td(SC)
min. value valid only if input "off-signal" time exceeds 30 s
200 200 300 80 14 40 -150 --
320 400 480 -17 44 6 -10
550 620 650 300 20 47 ----
A
s V V V C K
Output clamp 18) IL= 40 mA: -VOUT(CL) (inductive load switch off) Output clamp (inductive load switch off) VON(CL) at VOUT = Vbb - VON(CL) (e.g. overvoltage) IL= 40 mA Short circuit shutdown detection voltage (pin 3 to pins 1,5) VON(SC) Thermal overload trip temperature Tjt Thermal hysteresis Tjt Reverse Battery Reverse battery voltage 19) -Vbb On-state resistance (Pins 1,5 to pin 3) Tj = 25 C: RON(rev) 1) Vbb = -12V, VIN = 0, IL = - 30 A, RIS = 1 k Tj = 150 C: Integrated resistor in Vbb line Tj = 25 C: Tj = 150 C: Rbb
--90 105
-2.3 3.9 110 125
16 3.0 4.7 135 150
V m
16)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 17 ) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions. 18) This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off. 19) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Increasing reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
5
2003-Oct-01
Data Sheet BTS555
Parameter and Conditions
at Tj = -40 ... +150 C, Vbb = 12 V unless otherwise specified
Symbol
Values min typ max 25 000 26 000 24 000 25 000 25 000 23 000 24 000 24 000 23 000 23 000 23 000 23 000 29 000 28 500 26 500 31 200 30 200 27 200 33 500 31 500 27 500 40 500 40 500 29 000 34 000 32 000 29 000 40 000 35 000 31 500 48 000 40 000 32 000 61 000 45 000 34 000
Unit
Diagnostic Characteristics Current sense ratio, IL = 120 A,Tj =-40C: kILIS static on-condition, Tj =25C: kILIS = IL : IIS, Tj =150C: VON < 1.5 V20), IL = 30 A,Tj =-40C: VIS 4.0 V Tj =150C: (see diagram on page 10) IL = 16 A,Tj =-40C: Tj =25C: Tj =150C: IL = 12 A,Tj =-40C: Tj =25C: Tj =150C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Sense current saturation Current sense leakage current
IIS,lim IIN = 0, VIS = 0: IIS(LL) VIN = 0, VIS = 0, IL 0: IIS(LH)
6.5 ---60 62
--2 --66
-0.5 -500 ---
mA A
Current sense settling time21) Overvoltage protection Ibb = 15 mA ts(IS) Tj =-40C: VbIS(Z) Tj = 25...+150C: s V
Input Input and operating current (see diagram page 13) IIN(on)
IN grounded (VIN = 0)
---
0.8 --
1.5 40
mA A
Input current for turn-off22)
IIN(off)
20)
If VON is higher, the sense current is no longer proportional to the load current due to sense current saturation, see IIS,lim . 21) not subject to production test, specified by design 22) We recommend the resistance between IN and GND to be less than 0.5 k for turn-on and more than 500k for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb.
Infineon Technologies AG
6
2003-Oct-01
Data Sheet BTS555 Truth Table
Input current level Normal operation Very high load current Currentlimitation Short circuit to GND Overtemperature Short circuit to Vbb Open load Negative output voltage clamp Inverse load current L H H H L H L H L H L H L L H Output level L H H H L L L L H H Z24) H L H H Current Sense IIS 0 nominal IIS, lim 0 0 0 0 0 0 =IL / kilis, up to IIS=IIS,lim up to VON=VON(Fold back) IIS no longer proportional to IL VON > VON(Fold back) if VON>VON(SC), shutdown will occure
L = "Low" Level H = "High" Level Overtemperature reset via input: IIN=low and Tj < Tjt (see diagram on page14) Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
I bb VbIN 3 Vbb IL V bb RIN V
IN
RON measurement layout (straight leads)
VON OUT
5.5 mm
2
IN PROFET IS
1,5
I IN
VbIS
4
I IS DS V OUT
Vbb force contacts
Out Force Sense contacts contacts (both out pins parallel)
VIS
R IS
Two or more devices can easily be connected in parallel to increase load current capability.
23) 24)
Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS. Power Transistor "OFF", potential defined by external impedance.
Infineon Technologies AG
7
2003-Oct-01
Data Sheet BTS555
Input circuit (ESD protection)
V bb
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC) (80 ...300 s).
+ Vbb
V V bIN
ZD
R bb
Z,IN
IN I
IN
VON
OUT Logic unit Short circuit detection
V IN
When the device is switched off (IIN = 0) the voltage between IN and GND reaches almost Vbb. Use a mechanical switch, a bipolar or MOS transistor with appropriate breakdown voltage as driver. VZ,IN = 66 V (typ).
Inductive and overvoltage output clamp
+ Vbb VZ1 VON
Current sense status output
Vbb R bb
ZD
VZG
OUT
PROFET
V
Z,IS
DS
IS
VOUT
IS
IIS R
IS
VIS
VZ,IS = 66 V (typ.), RIS = 1 k nominal (or 1 k /n, if n devices are connected in parallel). IS = IL/kilis can be only driven by the internal circuit as long as Vout - VIS > 5V. If you want to measure load currents up to IL(M), RIS should be less than V bb - 5V .
I L ( M ) / K ilis
VON is clamped to VON(Cl) = 42 V typ. At inductive load switch-off without DS, VOUT is clamped to VOUT(CL) = -17 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of the inductive load, but higher peak power dissipation in the PROFET. In case of a floating ground with a potential higher than 19V referring to the OUT - potential the device will switch on, if diode DS is not used.
Overvoltage protection of logic part
+ Vbb V R IN
Z,IN
Note: For large values of RIS the voltage VIS can reach almost Vbb. See also overvoltage protection. If you don't use the current sense output in your application, you can leave it open.
V
Z,IS
R bb
IN
Logic
V OUT
IS
PROFET
RV
Signal GND
R IS
V Z,VIS
Rbb = 120 typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 k nominal. Note that when overvoltage exceeds 71 V typ. a voltage above 5V can occur between IS and GND, if RV, VZ,VIS are not used.
Infineon Technologies AG
8
2003-Oct-01
Data Sheet BTS555
Reverse battery protection
- Vbb
R bb
Version b:
V
IN OUT
bb IN
Vbb PROFET OUT
R IN
Logic
IS
Power Transistor
IS
DS R IS RV
RL
V Zb
D
Signal GND
Power GND
Note that there is no reverse battery protection when using a diode without additional Z-diode VZL, VZb.
Version c: Sometimes a neccessary voltage clamp is RV 1 k, RIS = 1 k nominal. Add RIN for reverse given by non inductive loads RL connected to the same battery protection in applications with Vbb above switch and eliminates the need of clamping circuit: 1 1 1 + + = 16 V19); recommended value: RIN RIS RV 0.1A 1 0.1A if DS is not used (or = if DS is |Vbb| - 12V RIN |Vbb| - 12V V Vbb bb RL used). To minimize power dissipation at reverse battery OUT IN PROFET operation, the summarized current into the IN and IS pin should be about 120mA. The current can be provided by using a small signal diode D in parallel to IS the input switch, by using a MOSFET input switch or by proper adjusting the current through RIS and RV.
Vbb disconnect with energized inductive load
Provide a current path with load current capability by using a diode, a Z-diode, or a varistor. (VZL < 72 V or VZb < 30 V if RIN=0). For higher clamp voltages currents at IN and IS have to be limited to 250 mA. Version a:
V
bb IN
V
bb OUT
PROFET
IS
V ZL
Infineon Technologies AG
9
2003-Oct-01
Data Sheet BTS555
Inverse load current operation
Vbb
Maximum allowable load inductance for a single switch off
L = f (IL ); Tj,start = 150C, Vbb = 12 V, RL = 0
1000000
V bb
+ IN
- IL
PROFET IS OUT
-
V OUT + IIS
-
100000
V IN V IS
R IS
10000
The device is specified for inverse load current operation (VOUT > Vbb > 0V). The current sense feature is not available during this kind of operation (IIS = 0). With IIN = 0 (e.g. input open) only the intrinsic drain source diode is conducting resulting in considerably increased power dissipation. If the device is switched on (VIN = 0), this power dissipation is decreased to the much lower value RON(INV) * I2 (specifications see page 4). Note: Temperature protection during inverse load current operation is not possible!
1000
100
10
1 1 10 100 1000
L [H]
Inductive load switch-off energy dissipation
E bb E AS V V bb ELoad bb i L(t) IN PROFET IS I IN ZL OUT L RL EL
IL [A]
Externally adjustable current limit
If the device is conducting, the sense current can be used to reduce the short circuit current and allow higher lead inductance (see diagram above). The device will be turned off, if the threshold voltage of T2 is reached by IS*RIS . After a delay time defined by RV*CV T1 will be reset. The device is turned on again, the short circuit current is defined by IL(SC) and the device is shut down after td(SC) with latch function.
Vbb
{
RIS
ER
Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L EAS= (V + |VOUT(CL)|) 2*RL bb
IN Signal
RV
2
IN
V bb
PROFET
OUT
IS
Rload
T1
Signal GND
CV
T2
ln (1+ |V
IL*RL
R IS
Power GND
OUT(CL)|
)
Infineon Technologies AG
10
2003-Oct-01
Data Sheet BTS555
Options Overview Type BTS 6510 550P 555 650P
X X X X X X26) X X26) X X X26) X X X X
Overtemperature protection with hysteresis Tj >150 C, latch function25) Tj >150 C, with auto-restart on cooling Short circuit to GND protection
with overtemperature shutdown switches off when VON>6 V typ. (when first turned on after approx. 180 s)
Overvoltage shutdown Output negative voltage transient limit
to Vbb - VON(CL) to VOUT = -15 V typ
Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch between turn on and td(SC). 26) Can be "switched off" by using a diode D (see page 8) or leaving open the current sense output. S
25)
Infineon Technologies AG
11
2003-Oct-01
Data Sheet BTS555
Characteristics
Current sense versus load current: IIS = f(IL) IIS [mA]
7
Current sense ratio: KILIS = f(IL), TJ = 25 C kilis
65000
60000 6 55000 5
max
4
50000
45000
3
40000
min
35000 2 30000 1 25000
max typ
min
0 0 50 100 150 20000 0 50 100 150
IL [A] Current sense ratio: KILIS = f(IL), TJ = -40 C kilis
65000
IL [A] Current sense ratio: KILIS = f(IL), TJ = 150 C kilis
65000
60000
60000
55000
55000
50000
50000
45000
45000
40000
40000
max
35000 35000
typ
30000 30000
max
25000
25000
typ
min
20000 0 50 100 150 20000 0 50
min
100 150
IL [A]
IL [A]
Infineon Technologies AG
12
2003-Oct-01
Data Sheet BTS555
Typ. current limitation characteristic IL = f (VON, Tj ) IL [A]
1000 900 800
Typ. input current IIN = f (VbIN), VbIN = Vbb - VIN IIN [mA]
1.6 1.4 1.2
700 600 500 400 300 200
VON >VON(SC) only for t < t d(SC) (otherwise immediate shutdown)
1.0 0.8
Tj = -40C 85C
25C
0.6 0.4 0.2
150C
100 0 0 VON(FB) 10 15 20
0 0 20 40 60 80
VbIN [V]
VON [V] In case of VON > VON(SC) (typ. 6 V) the device will be switched off by internal short circuit detection. Typ. on-state resistance RON = f (Vbb, Tj ); IL = 30 A; VIN = 0 RON [mOhm]
6 static 5 dynamic
4
Tj = 150C 85C 25C -40C
3
2
1
0 0 5 10 15 40 20
Vbb [V]
Infineon Technologies AG
13
2003-Oct-01
Data Sheet BTS555
Timing diagrams
Figure 1a: Switching a resistive load, change of load current in on-condition: Figure 2b: Switching an inductive load:
IIN
IIN
VOUT
90% t on dV/dton 10% t off
dV/dtoff
VOUT
IL
tslc(IS)
t slc(IS)
IL
Load 1
Load 2
IIS
IIS
tson(IS) t soff(IS) t t
The sense signal is not valid during a settling time after turn-on/off and after change of load current. Figure 3a: Short circuit: shut down by short circuit detection, reset by IIN = 0. Figure 2a: Switching motors and lamps:
IIN IIN IL IL(SCp) VOUT td(SC)
IIL IIS VOUT>>0 VOUT=0 IIS
t
t
Sense current saturation can occur at very high inrush currents (see IIS,lim on page 6).
Shut down remains latched until next reset via input.
Infineon Technologies AG
14
2003-Oct-01
Data Sheet BTS555
Figure 4a: Overtemperature, Reset if (IIN=low) and (TjI IN
IS
V
OUT
T
J
t
Figure 6a: Undervoltage restart of charge pump, overvoltage clamp
VOUT
VIN = 0
6
4
dynamic, short Undervoltage not below VbIN(u)
VON(CL)
2
IIN = 0
V ON(CL)
0 0 VbIN(u) VbIN(ucp)
Infineon Technologies AG
15
2003-Oct-01
Data Sheet BTS555
Package and Ordering Code
All dimensions in mm
TO-218AB/5 Option E3146 Ordering code
BTS555 E3146 Q67060-S6953A3
Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 Munchen (c) Infineon Technologies AG 2001 All Rights Reserved. Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
TO-218AB/5-1
BTS555
Ordering code Q67060-S6954
15 0.2 14.8 10.8 0.2 4.04 +0.3
4
4.9 2 +0.1 -0.02
1)
1+1
11.5 0.5
14 0.53)
2)
12.5 +0.3
3.5
Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
20.3 0.2
10
16.3 +0.15 -0.25
1.1 2.54 0.4 M 4 x 2.54 = 10.16 1) Punch direction, burr max. 0.04 2) Dip tinning 3) Max. 15.5 by dip tinning press burr max. 0.05 radii not dimensioned max. 0.2
0.5 +0.15 4.5 0.3 8.2 0.3
Infineon Technologies AG
16
2003-Oct-01

▲Up To Search▲

Price & Availability of BTS555E3146

	To Download BTS555E3146 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .